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for the most cu rrent data, consult microsemis website: www.microsemi.com specifications are subject to change, consult the rfis factory at (408) 986-8031 for the latest information dc35gn-15-q4 15 watts ? 50 volts ? pulsed & cw gan on sic wideband transistor qfn 4x4 mm typical performance summary 1 @ 25 ? c 1 bias condition: vdd=+50v, idq= 40 ma (vgs= -2.0 ~ -4.5v typical) , pw= 1 ms , dc = 10% rf performance measured on the recommended evaluation board. general description the dc35 gn -15-q4 is a common source, class - ab , gan on sic hemt transis to r capable of broadband pulsed and cw rf power applications. this transistor utilizes gold metallization, air-cavity cu-base qfn package with high-thermal conductiv it y to provide superior electrical and thermal performance with excellent reliability & ruggedness. features: ? wide- band dc -3.5 ghz general purpose driver applications ? ideal for pulsed radar, avionics, ism , and cw communication ? 15 w pulsed and cw psat and 18 db power gain @ 1.4 ghz ? low-cost qfn package with excellent rf & thermal performance ? 50v bias operation with high breakdown voltage package outline qfn 4x4 mm absolute maximum ratings maximum cw power dissipation device dissipation @ 25 ? c 15 w maximum voltage and current drain-source voltage (v dss ) 1 25 v gate-source voltage (v gs ) -8 to +0 v supply current ( i dd ) 700 ma maximum temperatures storage temperature (t stg ) -55 to +125 ? c op erating junction temperature +200 ? c parameter units 0.960 ghz 1.2 ghz 1.4 ghz 2.7 ghz 2.9 ghz 3.1 ghz 3.5 ghz output power psat w 20 21 19 20 20 20 16 power gain db 18.5 18.3 18 13 13 13 12 ? d drain efficiency % 65 72 66 60 63 60 60 downloaded from: http:///
for the most cu rrent data, consult microsemis website: www.microsemi.com specifications are subject to change, consult the rfis factory at (408) 986-8031 for the latest information dc35gn-15-q4 15 watts ? 50 volts ? pulsed & cw gan on sic wideband transistor qfn 4x4 mm dc functional characteristics @ 25 ? c i d(off) drain leakage current v gs = -8v, v dd = 50 v 1 ma i g(off) gate leakage current v g s = -8v, v dd = 0v 0.2 ma bv dss drain-source breakdown voltage v gs =-8v, i dd = 2 ma 12 5 v v gs(th) gate threshold voltage v ds =50v, i dd = 2 ma - 4.8 - 3.4 - 2.5 v electrical characteristics 1 @ 25 ? c symbol characteristics test conditions 1 min typ max units pout output power pin=0.32 w freq=1400 mhz 15 19 w gp power gain pin=0.32w freq=1400 mhz 18 db ? d drain efficiency pin=0.32w freq=1400 mhz 55 66 % dr droop pin=0.32w freq=1400 mhz 0.1 db vswr-t load mismatch tolerance pin=0.32w freq=1400 mhz 5 :1 ?jc thermal resistance including pcb, tbase = 85 c pulse width=1 ms duty=10% cw 3.5 8.4 c/w 1 bias condition: vdd=+50v, idq= 40 ma (vgs= - 2. 0 ~ -4.5v typical), pw=1 ms, dc = 10% rf performance measured on the recommended evaluation board. downloaded from: http:///
for the most cu rrent data, consult microsemis website: www.microsemi.com specifications are subject to change, consult the rfis factory at (408) 986-8031 for the latest information dc35gn-15-q4 15 watts ? 50 volts ? pulsed & cw gan on sic wideband transistor qfn 4x4 mm performance plots typical cw performance data 300 C 500 mhz band downloaded from: http:///
for the most cu rrent data, consult microsemis website: www.microsemi.com specifications are subject to change, consult the rfis factory at (408) 986-8031 for the latest information dc35gn-15-q4 15 watts ? 50 volts ? pulsed & cw gan on sic wideband transistor qfn 4x4 mm typical broad band pulsed performance data 1 0.96 C 1. 2 15 ghz band frequency pin (w) pout (w) id (a) rl (db) d (%) gain (db) droop (db) 960 mhz 0.32 22 . 680 - 12 67 1 8.6 0. 25 110 0 mhz 0.32 22 . 630 - 10.5 72 1 8.6 0 .1 2 1215 mhz 0.32 21 . 600 - 14.7 71 1 8.3 0. 10 performance plots downloaded from: http:///
for the most cu rrent data, consult microsemis website: www.microsemi.com specifications are subject to change, consult the rfis factory at (408) 986-8031 for the latest information dc35gn-15-q4 15 watts ? 50 volts ? pulsed & cw gan on sic wideband transistor qfn 4x4 mm typical broad band pulsed performace data 1 1.2 C 1.4 ghz band frequency pin (w) pout (w) id (a) rl (db) d (%) gain (db) droop (db) 120 0 mhz 0.32 21.4 .5 90 - 10 72.5 18.3 0 .1 1300 mhz 0.32 20.4 .5 80 - 17 70.3 1 8.1 0 .1 1400 mhz 0.32 19 .3 .5 80 - 12 66.5 17 .9 0 .1 2 performance pl ots downloaded from: http:///
for the most cu rrent data, consult microsemis website: www.microsemi.com specifications are subject to change, consult the rfis factory at (408) 986-8031 for the latest information dc35gn-15-q4 15 watts ? 50 volts ? pulsed & cw gan on sic wideband transistor qfn 4x4 mm performance plots typical broad band pulsed performace data 1 2.7 C 3.1 ghz band downloaded from: http:///
for the most cu rrent data, consult microsemis website: www.microsemi.com specifications are subject to change, consult the rfis factory at (408) 986-8031 for the latest information dc35gn-15-q4 15 watts ? 50 volts ? pulsed & cw gan on sic wideband transistor qfn 4x4 mm typical broad band pulsed performace data 1 3.1 C 3.5 ghz band frequency pin (w) pout (w) id (a) rl (db) d (%) gain (db) droop (db) 3100 mhz 1.0 2 0.0 . 670 -6 60 13 0 .2 3300 mhz 1.0 18.0 . 580 - 7.6 62 1 2.6 0 .1 2 3500 mhz 1.0 16.0 .5 40 - 8.4 60 12 0 .1 1 performance plots downloaded from: http:///
for the most cu rrent data, consult microsemis website: www.microsemi.com specifications are subject to change, consult the rfis factory at (408) 986-8031 for the latest information dc35gn-15-q4 15 watts ? 50 volts ? pulsed & cw gan on sic wideband transistor qfn 4x4 mm thermal ir scan data ( freq = 1.2 ghz) downloaded from: http:///
for the most cu rrent data, consult microsemis website: www.microsemi.com specifications are subject to change, consult the rfis factory at (408) 986-8031 for the latest information dc35gn-15-q4 15 watts ? 50 volts ? pulsed & cw gan on sic wideband transistor qfn 4x4 mm thermal ir scan data ( freq = 1.2 ghz) downloaded from: http:///
for the most cu rrent data, consult microsemis website: www.microsemi.com specifications are subject to change, consult the rfis factory at (408) 986-8031 for the latest information dc35gn-15-q4 15 watts ? 50 volts ? pulsed & cw gan on sic wideband transistor qfn 4x4 mm evaluation board layout q4 eb2 assembly diagram and bom for 300-500 mhz board material: rogers ro4003c, 12 mil thickness, er = 3.38, 1 oz cu 8 mil dia vias below package, qty: 39, solid cu filled. board size: 1.5 x 1.3 inches item description 300 - 500 mhz c11,c12 0603, 39 pf, 5%, 250v, atc 600s c1 0603, 10 pf, 5%, 250v, atc 600s c9 0603, 1.8 pf, 0.25pf, 250v, atc 600s c4,c5,c13 0603, 470 pf, 5%, 100v, avx, x7r c6,c14 0603, 10000 pf, 10%, 100v, avx, x7r c8,c15 1206, 4.7 uf, 10%, 100v, avx, x7s r1 0603 300 r8 0603 360 r5 0603 5.1 r2 0402 5.1 r3 0402 68 r6 0603 20 r7 0402 0 jumper l1 0603hp, 15 nh , 5% coilcraft l2 0603hp, 56 nh , 5% coilcraft l3 1008af, 0.9 uh , 5% coilcraft l4 0603hp, 7.5 nh , 5% coilcraft l5 0603hp, 4.7 nh , 5% coilcraft j3 tsm-105-01-s-sv-a, samtec q1 dc35gn-15-q4 qfn 4x4, 24l note: rf input is dc short but gate input is dc blocked downloaded from: http:///
for the most cu rrent data, consult microsemis website: www.microsemi.com specifications are subject to change, consult the rfis factory at (408) 986-8031 for the latest information dc35gn-15-q4 15 watts ? 50 volts ? pulsed & cw gan on sic wideband transistor qfn 4x4 mm evaluation board layout q4 eb2 assembly diagram and bom for 960-1215 mhz and 1200-1400 mhz board material: rogers ro4003c, 12 mil thickness, er = 3.38, 1 oz cu 8 mil dia vias below package, qty: 39, solid cu filled. board size: 1.5 x 1.3 inches item description 0.96 - 1.215 ghz description 1.2 - 1 .4 ghz c1,c11,c12 0603, 39 pf, 5%, 250v, atc 600s 0603, 39 pf, 5%, 250v, atc 600s c2 0603, 2.4 pf, 250v, atc 600s n/a c3 n/a 0603, 3.9 pf, 250v, atc 600s c9 0603, 1.8 pf, 0.25pf, 250v, atc 600s 0603, 1.8 pf, 0.25pf, 250v, atc 600s c4,c5,c13 0603, 470 pf, 5%, 100v, avx, x7r 0603, 470 p f, 5%, 100v, avx, x7r c6,c14 0603, 10000 pf, 10%, 100v, avx, x7r 0603, 1000 0 pf, 10%, 100v, avx, x7r c8,c15 1206, 4.7 uf, 10%, 100v, avx, x7s 1206, 4.7 uf , 10%, 100v, avx, x7s r1 0603 0 jumper 0603 6.2 r5 0603 5.1 0603 5.1 r3 0402 12 0402 12 r6 0603 20 0603 20 l1 0402hp, 2.2 nh , 5% coilcraft 0402hp, 2.2 nh , 5% coil craft l2 0402pa, 1.9 nh , 5% coilcraft 0402pa, 1.9 nh , 5% coil craft l3 0603hp, 39 nh , 5% coilcraft 0603hp, 27 nh , 5% coilcra ft l4 0603hp, 7.5 nh , 5% coilcraft 0603hp, 7.5 nh , 5% coil craft l5 0603hp, 4.7 nh , 5% coilcraft 0603hp, 4.7 nh , 5% coil craft l6 0402hp 1nh, 5% coilcraft 0402 0 jumper j3 tsm-105-01-s-sv-a, samtec tsm-105-01-s-sv-a, samtec q1 dc35gn-15-q4 qfn 4x4, 24l dc35gn-15-q4 qfn 4x4, 24 l downloaded from: http:///
for the most cu rrent data, consult microsemis website: www.microsemi.com specifications are subject to change, consult the rfis factory at (408) 986-8031 for the latest information dc35gn-15-q4 15 watts ? 50 volts ? pulsed & cw gan on sic wideband transistor qfn 4x4 mm evaluation board layout q4 eb2 assembly diagram and bom for 2700- 31 00 mhz & 3100-3500 mhz board material: rogers ro4003c, 12 mil thickness, er = 3.38, 1 oz cu 8 mil dia vias below package, qty: 39, solid cu filled. board size: 1.5 x 1.3 inches downloaded from: http:///
for the most cu rrent data, consult microsemis website: www.microsemi.com specifications are subject to change, consult the rfis factory at (408) 986-8031 for the latest information dc35gn-15-q4 15 watts ? 50 volts ? pulsed & cw gan on sic wideband transistor qfn 4x4 mm qfn 4x4 mm package outline & dimensions all dimensions are in mm (typ). notes: 1. backside exposed pad must be connected to solid cu filled vias for optimum rf & th ermal performance. see recommended evaluation board layout pin function 1,6,13,18 rf gnd (source) 2,3,4,5 rf in (gate) 7,8,9,10,11,12 n/c 14,15,16,17 rf out (drain) 19,20,21,22,23,24 n/c backside exposed pad rf gnd (source) & thermal pad downloaded from: http:///
for the most cu rrent data, consult microsemis website: www.microsemi.com specifications are subject to change, consult the rfis factory at (408) 986-8031 for the latest information dc35gn-15-q4 15 watts ? 50 volts ? pulsed & cw gan on sic wideband transistor qfn 4x4 mm the information contained in the document is proprietary and confi dential information of microsemi and cannot be copied, published, uploaded, posted, transmitted, distributed or d isclosed or used without the express duly signed written consent of microsemi if the recipient of this document has entered into a disclosure agreement with microsemi, then the term s of such agreement will also apply . this document and the informa tion contained herein may not be modified, by any person oth er than authorized personnel of microsemi. no license under an y patent, copyright, trade secret or other intellectual property right is granted to or conferred upon you by disclosure or delivery of the information, either expressly, by implication, inducemen t, estoppels or otherwise. any license under such intellectual property rights must be approved by microsemi in writing signed by a n officer of microsemi. microsemi reserves the right to change the configuration, f unctionality and performance of its products at anytime without any notice. this product has been subject to limited testing and should not be used in conjunction with life-support or other mission -critical equipment or applications. microsemi assumes no liability wh atsoever, and microsemi disclaims any express or implied wa rranty, relating to sale and/or use of microsemi products including liabil ity or warranties relating to fitness for a particular purpos e, merchantability, or infringement of any patent, copyright o r other intellectual property right. the product is subject to other terms and conditions which can be located on the web at http://www .microsemi.com/legal/tnc.asp. revision history revision date affected section(s) description 2 .0 09 - 16 - 14 - initial preliminary release 3.0 12 - 04 - 14 - added more preliminary data 4.0 2- 17 - 15 - added more data, updated pcb layout and bom 5.0 5-1- 15 - added 3.1-3.5 ghz data, pcb layout and bom downloaded from: http:///

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